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ZnO p-n homojunctions and ohmic contacts to Al–N-co-doped p-type ZnO.
- Source :
-
Applied Physics Letters . 8/29/2005, Vol. 87 Issue 9, p092103. 3p. 1 Diagram, 1 Chart, 4 Graphs. - Publication Year :
- 2005
-
Abstract
- ZnO p-n homojunctions were fabricated on quartz substrates by depositing Al-doped n-type ZnO layer on Al–N-co-doped p-type ZnO layer through reactive magnetron sputtering. In/Zn metal contacts to as-grown ZnO show ohmic behavior, and the ohmic contacts can be improved by annealing in an Ar ambient. The optimal annealing temperatures for Al–N-co-doped ZnO and Al-doped ZnO are 550 °C and 600 °C, respectively. The p-n junction characteristic is confirmed by current-voltage measurements. The turn-on voltage is 2 V, with a low leakage current under reverse bias. Series resistances of the ZnO p-n junctions can be lowered by optimizing the annealing temperature, increasing the grain size of the ZnO, or increasing the hole concentration of the p layer. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 87
- Issue :
- 9
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 18429496
- Full Text :
- https://doi.org/10.1063/1.2012521