Properties of Na0.5Bi0.5TiO3 ferroelectric films prepared by chemical solution decomposition

Authors :: Yang, C.H.
Wang, Z.
Li, Q.X.
Wang, J.H.
Yang, Y.G.
Gu, S.L.
Yang, D.M.
Han, J.R.
Source :: Journal of Crystal Growth. Oct2005, Vol. 284 Issue 1/2, p136-141. 6p.
Publication Year :: 2005
Abstract: Abstract: Na0.5Bi0.5TiO3 thin films have been grown on p-type Si(111) and Pt/Ti/SiO2/Si substrates by a method of chemical solution decomposition. The structure and microscopy were studied by X-ray diffraction and atomic force microscopy, respectively. The electrical measurements were conducted on metal–ferroelectric–semiconductor or metal–ferroelectric–metal capacitors. The films show low leakage current. They also exhibit good ferroelectric and dielectric properties. [Copyright &y& Elsevier]

Subjects :: *THIN films
*OPTICS
*SOLID state electronics
*ATOMIC force microscopy

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