Quantitative scanning capacitance spectroscopy on GaAs and InAs quantum dots.

In this work, quantitative scanning capacitance spectroscopy studies on bulk GaAs samples and InAs quantum dots are carried out in an ambient atmosphere. The experimental results are described by a simple spherical capacitor model, and the corresponding barrier heights and sample dopings are determined. We further find a strong dependence of the C(V) data on the applied tip force. The barrier height decreases significantly with increasing pressure. [ABSTRACT FROM AUTHOR]