Write error reduction in magnetic tunnel junctions for voltage-controlled magnetoresistive random access memory by using exchange coupled free layer.

MLA

Sakai, Lui, et al. “Write Error Reduction in Magnetic Tunnel Junctions for Voltage-Controlled Magnetoresistive Random Access Memory by Using Exchange Coupled Free Layer.” Applied Physics Letters, vol. 126, no. 2, Jan. 2025, pp. 1–5. EBSCOhost, https://doi.org/10.1063/5.0241713.

APA

Sakai, L., Higo, Y., Hosomi, M., Matsumoto, R., Nozaki, T., Yuasa, S., & Imamura, H. (2025). Write error reduction in magnetic tunnel junctions for voltage-controlled magnetoresistive random access memory by using exchange coupled free layer. Applied Physics Letters, 126(2), 1–5. https://doi.org/10.1063/5.0241713

Chicago

Sakai, Lui, Yutaka Higo, Masanori Hosomi, Rie Matsumoto, Takayuki Nozaki, Shinji Yuasa, and Hiroshi Imamura. 2025. “Write Error Reduction in Magnetic Tunnel Junctions for Voltage-Controlled Magnetoresistive Random Access Memory by Using Exchange Coupled Free Layer.” Applied Physics Letters 126 (2): 1–5. doi:10.1063/5.0241713.