1500 V recessed-free GaN-based HEMTs with ultrathin barrier epitaxial structure.

MLA

Sun, Nan, et al. “1500 V Recessed-Free GaN-Based HEMTs with Ultrathin Barrier Epitaxial Structure.” Applied Physics Letters, vol. 125, no. 23, Dec. 2024, pp. 1–5. EBSCOhost, https://doi.org/10.1063/5.0235148.

APA

Sun, N., Wang, R., Huang, H., Lei, Y., Dai, J., Han, R., Zuo, Q., Tao, P., Liu, Y., Song, S., Ren, Y., Cheng, W., & Liang, H. (2024). 1500 V recessed-free GaN-based HEMTs with ultrathin barrier epitaxial structure. Applied Physics Letters, 125(23), 1–5. https://doi.org/10.1063/5.0235148

Chicago

Sun, Nan, Ronghua Wang, Huolin Huang, Yun Lei, Jianxun Dai, Rong Han, Qingyuan Zuo, et al. 2024. “1500 V Recessed-Free GaN-Based HEMTs with Ultrathin Barrier Epitaxial Structure.” Applied Physics Letters 125 (23): 1–5. doi:10.1063/5.0235148.