Temperature dependent growth of ytterbium oxide as gate dielectric on silicon substrate via combination of nitrogen and oxygen ambient.

MLA

Aldayyat, Abdallah, et al. “Temperature Dependent Growth of Ytterbium Oxide as Gate Dielectric on Silicon Substrate via Combination of Nitrogen and Oxygen Ambient.” Ceramics International, vol. 51, no. 2, Jan. 2025, pp. 1517–25. EBSCOhost, https://doi.org/10.1016/j.ceramint.2024.11.124.

APA

Aldayyat, A., Ghaly, W. A., Elhassan, M. S., & Yam, F. K. (2025). Temperature dependent growth of ytterbium oxide as gate dielectric on silicon substrate via combination of nitrogen and oxygen ambient. Ceramics International, 51(2), 1517–1525. https://doi.org/10.1016/j.ceramint.2024.11.124

Chicago

Aldayyat, Abdallah, W.A. Ghaly, Mustafa S. Elhassan, and Fong Kwong Yam. 2025. “Temperature Dependent Growth of Ytterbium Oxide as Gate Dielectric on Silicon Substrate via Combination of Nitrogen and Oxygen Ambient.” Ceramics International 51 (2): 1517–25. doi:10.1016/j.ceramint.2024.11.124.