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Silicon field emission array as novel charge neutralization device for high current ion implanter

Authors :
Ishikawa, J.
Gotoh, Y.
Nakamura, K.
Kojima, T.
Tsuji, H.
Ikejiri, T.
Sakai, S.
Umisedo, S.
Nagai, N.
Nagao, M.
Kanemaru, S.
Source :
Nuclear Instruments & Methods in Physics Research Section B. Aug2005, Vol. 237 Issue 1/2, p390-394. 5p.
Publication Year :
2005

Abstract

Abstract: We propose use of silicon field emission array as a novel charge neutralization device for ion implanter. Fundamental characteristics of the emitted electrons, i.e. energy distribution and operation in high vacuum were investigated. As a result, energy spread was narrow enough but unexpected energy peak shift was observed. To reduce the energy spread and peak shift, a FEA with less number of tips and with narrower gate diameter is necessary. The FEA could be operated about 100h in high vacuum. [Copyright &y& Elsevier]

Details

Language :
English
ISSN :
0168583X
Volume :
237
Issue :
1/2
Database :
Academic Search Index
Journal :
Nuclear Instruments & Methods in Physics Research Section B
Publication Type :
Academic Journal
Accession number :
18192734
Full Text :
https://doi.org/10.1016/j.nimb.2005.05.033