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High‐Gain and Tunable Linear Photodetection in 2D Tunneling Heterostructures Through Potential Engineering.

Authors :
Wei, Laijiang
Wu, Zhiming
Wei, Yuchao
Li, Chunyu
Fu, Ziyi
Han, Jiayue
Yang, Xiutao
Xie, Jinling
Tian, Zexing
Zhou, Hongxi
Wang, Jun
Source :
Advanced Functional Materials. 12/23/2024, Vol. 34 Issue 52, p1-10. 10p.
Publication Year :
2024

Abstract

2D materials are extensively employed in the fabrication of high‐performance photodetectors owing to their exceptional physical properties. However, most 2D material photodetectors fail to sustain high gain under intense illumination due to the limited intrinsic trap states. Here, an n‐n type Bi2O2Se/SnSe2 van der Waals tunneling heterojunction photodetector with a detection range from visible to near‐infrared (VIS‐NIR) is presented. Under reverse bias, the heterojunction induces a significant electron barrier and hole potential well, ensuring low leakage current and ample hole defect states. Therefore, the photodetector demonstrated a responsivity of 1636.3 AW−1 and a detectivity of 1.39 × 1014 Jones under 660 nm illumination, maintaining a tunable linear dynamic range (LDR) of ≈74.7 dB. This performance is attributed to the hole potential well‐suppressing the recombination of photogenerated carriers, thereby enhancing the device's gain. Furthermore, the tunneling of photogenerated electrons within the heterojunction's space charge region under bias enables rapid response (75.1 and 15.6 µs). In summary, the study introduces a novel strategy to overcome the limited detection capabilities of 2D devices under intense illumination, characterized by outstanding linearity for rapid detection and high‐resolution imaging. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
1616301X
Volume :
34
Issue :
52
Database :
Academic Search Index
Journal :
Advanced Functional Materials
Publication Type :
Academic Journal
Accession number :
181848024
Full Text :
https://doi.org/10.1002/adfm.202411736