Realizing multi-level phase-change storage by monatomic antimony.

With the growing need for extensive data storage, enhancing the storage density of nonvolatile memory technologies presents a significant challenge for commercial applications. This study explores the use of monatomic antimony (Sb) in multi-level phase-change storage, leveraging its thickness-dependent crystallization behavior. We optimized nanoscale Sb films capped with a 4-nm SiO2 layer, which exhibit excellent amorphous thermal stability. The crystallization temperature ranges from 165 to 245 °C as the film thickness decreases from 5 to 3 nm. These optimized films were then assembled into a multilayer structure to achieve multi-level phase-change storage. A typical multilayer film consisting of three Sb layers was fabricated as phase-change random access memory (PCRAM), demonstrating four distinct resistance states with a large on/off ratio (∼102) and significant variation in operation voltage (∼0.5 V). This rapid, reversible, and low-energy multi-level storage was achieved using an electrical pulse as short as 20 ns at low voltages of 1.0, 2.1, 3.0, and 3.6 V for the first, second, and third SET operation, and RESET operation, respectively. The multi-level storage capability, enabled by segregation-free Sb with enhanced thermal stability through nano-confinement effects, offers a promising pathway toward high-density PCRAM suitable for large-scale neuromorphic computing. [ABSTRACT FROM AUTHOR]