Ytterbium-doping contribution to the overall dielectric and electrical properties of (Sr, Ba)Bi2Ta2O9 ceramics.

In this work, Yb-doped Sr0.95Ba0.05Bi2Ta2O9 powders were synthesized by the citric acid-assisted method. The prepared powders were uniaxially pressed and sintered at different temperatures. Structure, morphology, and dielectric properties were investigated. The use of either a 1200 °C sintering temperature or motifs for a reduction tanδ purpose. The results showed that Yb has not caused a significant change in dielectric properties at low temperatures, thus indicating its ability to reduce dielectric loss smoothly. At high temperatures, the introduction of ytterbium elements could reduce both Curie temperature and conductivity. According to Jonscher's universal power law, the correlated barrier-hopping (CBH) model describes the AC conductivity mechanism. However, the non-overlapping small polaron tunneling (NSPT) model may be used to show that this is only possible at a specific temperature. The Arrhenius law and the CBH module provide estimates of the various energy barriers that space charges should overcome; however, these barriers get higher as the dopant concentration rises. [ABSTRACT FROM AUTHOR]