Controlled Charge Polarity in WSe2 Field‐Effect Transistor Grown by Self‐Flux Method.

In 2D materials, tungsten diselenide (WSe2) has great potential for optical and electronic devices. However, the quality of WSe2 crystals, determined by defects and grain boundaries, currently restricts its performance in controlling carrier‐transport properties. Consequently, the most significant issue achieves superior growth of WSe2 crystals and appropriate metal contacts. Herein, a doping‐free approach to manipulate the polarity of WSe2 transistors by utilizing distinct metal contacts is presented. WSe2 field‐effect transistors are examined employing low‐ and high‐work function metals. In these findings, a transition in polarity from n‐type for In and Cr to p‐type for Pd and Au is demonstrated, showcasing remarkably high on/off ratios (≈107) and mobilities (≈117 cm2 V−1 s−1) at room temperature. This straightforward polarity control technique can be further extended by utilizing contact architecture‐based research in other 2D materials for future nano‐electrical and optoelectronic devices. [ABSTRACT FROM AUTHOR]