Tungsten interior doping engineering induced sulfur vacancies of MoS2 for efficient charge transfer and nonlinear optical performance: Implications for optical limiting devices.

[Display omitted] • The preparation strategy of integrated W-P/MoS 2 was developed by utilizing W doping engineering induced S v. • Modulating the photoelectric properties of MoS 2 via defect and doping engineering were analyzed. • DFT investigated the defect energy levels of S v introduced by tungsten doping in MoS 2. • The nonlinear optical and OL performance of W-P/MoS 2 was obtained at femtosecond time domain. Modulating the photoelectric properties of molybdenum disulfide (MoS 2) through defect engineering and heterometal doping is crucial for its potential applications in electronic and optoelectronic devices. Herein, a comprehensive overview is provided on the advancements of two-dimensional materials with a ternary structure comprising sulfur (S), molybdenum (Mo), and tungsten (W) in the field of optoelectronic device. A ternary W-P/MoS 2 (P: direct current target power) nanomaterial was designed and synthesized using W interior doping engineering induced S vacancies. The experimental results reveal that the introduction of W metal causes lattice distortion in MoS 2 , leading to the formation of S vacancies within W-P/MoS 2. Compared to pure MoS 2 , W-P/MoS 2 with S vacancies demonstrates enhanced reverse saturable absorption and optical limiting. Density functional theory calculations suggest that the S vacancies introduced by W doping in MoS 2 introduce defect energy levels, which are believed to be the reason for the improved nonlinear optical (NLO) performance of W-P/MoS 2. Furthermore, transient absorption spectroscopy reveals the photophysical model of carrier relaxation and presents an explanation for the optimized NLO properties of W-P/MoS 2. This work provides a novel strategy for the design and synthesis of ternary transition metal dichalcogenides and modulating the NLO properties by doping transition metal-mediated vacancies. [ABSTRACT FROM AUTHOR]