Defects in semiconductors.

The editorial in the Journal of Applied Physics discusses the importance of defects in semiconductor materials for designing semiconductor-based devices. It covers various types of defects, their impact on device performance, and advancements in defect modeling and experimentation. The document also highlights research areas such as defects in oxides, III-V semiconductors, silicon carbide, 2D materials, and detector/absorber materials. The study emphasizes the ongoing research in understanding defects in semiconductors and their implications for fields like quantum information science, power electronics, and energy storage and conversion. [Extracted from the article]