Back‐Bias Effects in a SiGe Nanosheet Transistor with Multiple Independent Gates.

MLA

Beyer, Christoph, et al. “Back‐Bias Effects in a SiGe Nanosheet Transistor with Multiple Independent Gates.” Advanced Materials Technologies, Nov. 2024, p. 1. EBSCOhost, https://doi.org/10.1002/admt.202401391.

APA

Beyer, C., Bhattacharjee, N., Mikolaijck, T., & Trommer, J. (2024). Back‐Bias Effects in a SiGe Nanosheet Transistor with Multiple Independent Gates. Advanced Materials Technologies, 1. https://doi.org/10.1002/admt.202401391

Chicago

Beyer, Christoph, Niladri Bhattacharjee, Thomas Mikolaijck, and Jens Trommer. 2024. “Back‐Bias Effects in a SiGe Nanosheet Transistor with Multiple Independent Gates.” Advanced Materials Technologies, November, 1. doi:10.1002/admt.202401391.