Feasibility study of CMOS sensors in 55 nm process for tracking.

High-Voltage CMOS (HVCMOS) sensors, featuring a deep n-well separating the transistors and the depletion region, are intrinsically radiation hard and a good candidate for tracking systems in future high energy physics experiments. In hope of reducing the power density and incorporating more functionality in the same area, we are looking for foundries where HVCMOS sensors can be implemented in smaller feature size. In this paper we report the feasibility study in two MPWs using 55 nm processes. Sensor diodes are designed with deep n-well serving as electrode in Low-Leakage process, and the test results are reported. Design and first results for MPW in 55 nm HVCMOS process will also be described. • First sensor chip implemented using HVCMOS 55 nm process. • Laser signal is observed in CMOS sensor diode using 55 nm process. • Breakdown voltage up to −70 V measured in 55 nm HVCMOS. [ABSTRACT FROM AUTHOR]