Improving the polarization switching properties of wurtzite AlN by introducing IV–IV/AlN superlattice and P-doping.

The large coercive electric field is the main obstacle for the application of wurtzite ferroelectrics in the memory devices. To explore the effective methods to reduce the coercive electric field of wurtzite ferroelectrics, in this work, after screening a series of possible candidates, (MC)1/(AlN)n (M = Ti, Zr) superlattices and anion P-doping are both chosen to regulate the switching energy barrier of wurtzite AlN based on the density functional theory calculations. It is found that the polarization switching energy barriers of wurtzite AlN gradually decrease by increasing the ratio of the MC (M = Ti, Zr) layer. When the ratio of the MC layer is up to 33%, the polarization switching energy barriers of (TiC)1/(AlN)n and (ZrC)1/(AlN)n are decreased by 68% and 55%, respectively, compared with that of pure wurtzite AlN. The anionic P-doping in AlN results in a 48% lower energy barrier. Also, the ferroelectric polarization in the designed superlattices and P-doped AlN is well maintained compared to pure AlN. Thus, the results show that the (MC)1/(AlN)n (M = Ti, Zr) superlattices and anion P-doping approaches are effective in improving the polarization switching properties of wurtzite AlN. [ABSTRACT FROM AUTHOR]