650 V vertical Al0.51Ga0.49N power Schottky diodes.

Authors :: Chen, Hang
Zhang, Shuhui
Yang, Tianpeng
Mi, Tingting
Wang, Xiaowen
Liu, Chao
Source :: Applied Physics Letters. 10/28/2024, Vol. 125 Issue 18, p1-5. 5p.
Publication Year :: 2024
Abstract: We report high-Al-composition (HAC) Al0.51Ga0.49N vertical power Schottky barrier diodes (SBDs) on sapphire substrates grown by metal organic chemical vapor deposition. The fabricated vertical HAC AlGaN-on-sapphire SBDs exhibit a low turn-on voltage of 1.31 V, a high on/off ratio of ∼107, a low ideality factor of 1.35, and a high breakdown voltage of 662 V. [ABSTRACT FROM AUTHOR]