Cite
Femtosecond laser controllable annealing for color centers based on ion-implanted silicon carbide substrate.
MLA
Wang, Jianshi, et al. “Femtosecond Laser Controllable Annealing for Color Centers Based on Ion-Implanted Silicon Carbide Substrate.” Ceramics International, vol. 50, no. 22, Nov. 2024, pp. 46566–78. EBSCOhost, https://doi.org/10.1016/j.ceramint.2024.09.009.
APA
Wang, J., Song, Y., Dong, B., Zhao, Y., Sun, Q., Yan, M., Yao, C., Du, Q., & Xu, Z. (2024). Femtosecond laser controllable annealing for color centers based on ion-implanted silicon carbide substrate. Ceramics International, 50(22), 46566–46578. https://doi.org/10.1016/j.ceramint.2024.09.009
Chicago
Wang, Jianshi, Ying Song, Bing Dong, Yukun Zhao, Qingqing Sun, Mengzhi Yan, Chengqi Yao, Quanbin Du, and Zongwei Xu. 2024. “Femtosecond Laser Controllable Annealing for Color Centers Based on Ion-Implanted Silicon Carbide Substrate.” Ceramics International 50 (22): 46566–78. doi:10.1016/j.ceramint.2024.09.009.