Component design for stabilizing P phase in NaNbO3-based ceramics and the energy storage performance.

Antiferroelectric (AFE) ceramic dielectrics are widely recognized for their high potential in high-power pulse equipment applications. Lead-free NaNbO 3 (NN) antiferroelectric ceramics have emerged as a prominent research topic in the field of energy storage due to their abundant phase structure, affordability, and moderate bandgap. The metastable ferroelectric Q phase results in a square hysteresis loop for NN at room temperature. However, 0.96NaNbO 3 -0.04 CaZrO 3 (NNCZ) exhibits a typical double hysteresis loop at room temperature with the main crystalline phase being the antiferroelectric P phase, which has poor energy storage performance. In this study, Bi 0.5 Na 0.5 TiO 3 (BNT) is used to optimize the energy storage performance and stabilize the P phase in NNCZ simultaneously. The dielectric constant and temperature-dependence XRD results that from −100 °C to 350 °C, x = 0.05 undergoes a phase transition from AFE P to AFE R and then to PE S. The solid solution of BNT decreased the sintering temperature of NN-based ceramics and decreased average grain size, thereby facilitating domain size reduction and improving the sample's energy storage efficiency from ∼30 % to ∼60 %, with an effective energy storage density reaching 1.51 J/cm3. The above results demonstrate that enhancing energy storage efficiency can be achieved through component design by reducing average grain size. [ABSTRACT FROM AUTHOR]