Enhancement of photoresponse for InGaAs infrared photodetectors using plasmonic WO 3−x /Cs y WO 3−x nanocrystals.

Fast and accurate detection of light in the near-infrared (NIR) spectral range plays a crucial role in modern society, from alleviating speed and capacity bottlenecks in optical communications to enhancing the control and safety of autonomous vehicles through NIR imaging systems. Several technological platforms are currently under investigation to improve NIR photodetection, aiming to surpass the performance of established III–V semiconductor p-i-n (PIN) junction technology. These platforms include in situ -grown inorganic nanocrystals (NCs) and nanowire arrays, as well as hybrid organic–inorganic materials such as graphene-perovskite heterostructures. However, challenges remain in NC and nanowire growth, large-area fabrication of high-quality 2D materials, and the fabrication of devices for practical applications. Here, we explore the potential for tailored semiconductor NCs to enhance the responsivity of planar metal–semiconductor–metal (MSM) photodetectors. MSM technology offers ease of fabrication and fast response times compared to PIN detectors. We observe enhancement of the optical-to-electric conversion efficiency by up to a factor of ∼2.5 through the application of plasmonically-active semiconductor nanorods and NCs. We present a protocol for synthesizing and rapidly testing the performance of non-stoichiometric tungsten oxide (WO 3 − x ) nanorods and cesium-doped tungsten oxide (Cs y WO 3 − x ) hexagonal nanoprisms prepared in colloidal suspensions and drop-cast onto photodetector surfaces. The results demonstrate the potential for a cost-effective and scalable method exploiting tailored NCs to improve the performance of NIR optoelectronic devices. [ABSTRACT FROM AUTHOR]