ANALYSIS OF THE INFLUENCE OF FORMATION OF Pd SILICIDES ON SURFACE LAYERS OF Si ON THE DIFFUSION OF ATOMS OF CONTACTING METAL.

4-probe measurements of surface resistivity, measurements of dark and light current-voltage characteristics, the possibilities of using a thin PdSi film to obtain perfect nano-sized ohmic contacts on the Si(111) surface have been investigated using Auger electron spectroscopy methods in combination with ion etching of the surface. It has been shown that the depth of Ni diffusion in the Ni-Si (111) system is 400 - 500 Å at indoor temperature, and 70 – 80 Å in the Ni-PdSi-Si (111) system. The quality of the ohmic contact in the latter case does not change up to T = 800 K and withstands luminous flux illumination up to F = 1100 lux. It is shown that the resistivity of the PdSi film passes through a minimum at T = 900 – 1000 K. An analysis of the results obtained will be given in the article. [ABSTRACT FROM AUTHOR]