Synthesis of sub‐micron sized SiC particles with high defect density by using polytetrafluoroethylene as an additive.

A new preparation process for silicon carbide (SiC) powder is developed. In the Si–(C) –PTFE–Ar system, the grain size and morphology of the product 3C–SiC were controlled by adding a carbon source (graphite) and changing the percentage of polytetrafluoroethylene (PTFE) (0%, 10%, and 20%). The experimental results showed that the SiC powders prepared using a molar ratio of 1:1 silicon powder to graphite, plus 20% PTFE have a uniform particle size distribution (∼130 nm), a lamellar structure made of spherical particle stacking, a small bandgap (1.80 eV), a high carrier concentration, and a large number of lattice defects. These properties are expected to increase the electrical conductivity of 3C–SiC and decrease its thermal conductivity, thus providing a promising feedstock preparation option for SiC thermoelectric materials. In addition, the mechanism of PTFE in the preparation of SiC reactions was studied in detail. [ABSTRACT FROM AUTHOR]