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Insights into the ferroelectric orthorhombic phase formation in doped HfO2 thin films.

Authors :
Wen, Yichen
Wu, Maokun
Cui, Boyao
Wang, Xuepei
Wu, Yishan
Li, Yu-Chun
Ye, Sheng
Ren, Pengpeng
Lu, Hong-Liang
Wang, Runsheng
Ji, Zhigang
Huang, Ru
Source :
Journal of Applied Physics. 9/28/2024, Vol. 136 Issue 12, p1-8. 8p.
Publication Year :
2024

Abstract

Despite the extensive research on HfO2-based thin films, the ferroelectric orthorhombic phase formation remains unclear. This work proposes a physical picture throughout the entire annealing process to describe the phase transition. Subsequently, the phase evolution at various doping and annealing temperatures is illustrated based on a kinetic model formalized from the classical nucleation theory. It is found that the formation of the ferroelectric orthorhombic phase depends not only on a modest doping concentration but also on the thermal activation of the t-to-o phase transition provided by a sufficient annealing temperature. In addition, phase transition rates correlated to the monoclinic phase formation are effectively suppressed by doping. The exploration of combined effects of annealing parameters indicates a more decisive role of the annealing temperature rather than the keeping time for induced ferroelectricity, and the doping impact becomes significant when a critical annealing temperature is reached. This work provides an understanding for exploring the kinetic effect on the phase transition in HfO2-based thin films, which helps improve ferroelectricity in doped HfO2 ferroelectric films. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00218979
Volume :
136
Issue :
12
Database :
Academic Search Index
Journal :
Journal of Applied Physics
Publication Type :
Academic Journal
Accession number :
180003176
Full Text :
https://doi.org/10.1063/5.0226390