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Insights into the ferroelectric orthorhombic phase formation in doped HfO2 thin films.
- Source :
-
Journal of Applied Physics . 9/28/2024, Vol. 136 Issue 12, p1-8. 8p. - Publication Year :
- 2024
-
Abstract
- Despite the extensive research on HfO2-based thin films, the ferroelectric orthorhombic phase formation remains unclear. This work proposes a physical picture throughout the entire annealing process to describe the phase transition. Subsequently, the phase evolution at various doping and annealing temperatures is illustrated based on a kinetic model formalized from the classical nucleation theory. It is found that the formation of the ferroelectric orthorhombic phase depends not only on a modest doping concentration but also on the thermal activation of the t-to-o phase transition provided by a sufficient annealing temperature. In addition, phase transition rates correlated to the monoclinic phase formation are effectively suppressed by doping. The exploration of combined effects of annealing parameters indicates a more decisive role of the annealing temperature rather than the keeping time for induced ferroelectricity, and the doping impact becomes significant when a critical annealing temperature is reached. This work provides an understanding for exploring the kinetic effect on the phase transition in HfO2-based thin films, which helps improve ferroelectricity in doped HfO2 ferroelectric films. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 136
- Issue :
- 12
- Database :
- Academic Search Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 180003176
- Full Text :
- https://doi.org/10.1063/5.0226390