Leakage current control of Y-HfO2 for dynamic random access memory applications via ZrO2 stacking.

MLA

Ryu, Young Uk, et al. “Leakage Current Control of Y-HfO2 for Dynamic Random Access Memory Applications via ZrO2 Stacking.” Ceramics International, vol. 50, no. 21, Nov. 2024, pp. 41483–89. EBSCOhost, https://doi.org/10.1016/j.ceramint.2024.07.464.

APA

Ryu, Y. U., Oh, H., Hwang, I., Park, Y., Kim, Y., & Jeon, W. (2024). Leakage current control of Y-HfO2 for dynamic random access memory applications via ZrO2 stacking. Ceramics International, 50(21), 41483–41489. https://doi.org/10.1016/j.ceramint.2024.07.464

Chicago

Ryu, Young Uk, Hansol Oh, Inchun Hwang, Yongjoo Park, Youngjin Kim, and Woojin Jeon. 2024. “Leakage Current Control of Y-HfO2 for Dynamic Random Access Memory Applications via ZrO2 Stacking.” Ceramics International 50 (21): 41483–89. doi:10.1016/j.ceramint.2024.07.464.