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Design and application of D‐band bandpass filter based on 0.18 μm complementary metal oxide semiconductor process.
- Source :
-
Microwave & Optical Technology Letters . Sep2024, Vol. 66 Issue 9, p1-6. 6p. - Publication Year :
- 2024
-
Abstract
- This paper designs a bandpass filter for D‐band and 0.18 μm complementary metal oxide semiconductor (CMOS) process. The bandpass filter is composed of an inverted L‐shaped coupling microstrip line and a cross‐coupled resonator, and is coupled to produce two controlled transmission zeros. A defected ground structure is used to make a good impedance match. The designed filter has a 3 dB impedance bandwidth of 52 GHz (149–201 GHz) with a center frequency of 175 GHz and an insertion loss of 3.23 dB. The design of this paper is a CMOS 0.18 μm process capable of applying the D‐band bandpass filter with the advantages of lower insertion loss, broadband, and compact size. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 08952477
- Volume :
- 66
- Issue :
- 9
- Database :
- Academic Search Index
- Journal :
- Microwave & Optical Technology Letters
- Publication Type :
- Academic Journal
- Accession number :
- 179945575
- Full Text :
- https://doi.org/10.1002/mop.34313