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Concept of Enabling Over-Current Capability of Silicon-Carbide-Based Power Converters with Gate Voltage Augmentation.
- Source :
-
Energies (19961073) . Sep2024, Vol. 17 Issue 17, p4319. 8p. - Publication Year :
- 2024
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Abstract
- Various methods have been discussed in the literature regarding enabling the over-current (OC) capability of silicon carbide (SiC) MOSFETs. SiC MOSFETs can operate at up to 250 °C without failure. One of their features is to permit transient operation at elevated temperatures. This is possible if the stress on the gate oxide and packaging can be kept to a level that can be handled. This paper, instead, investigates the potential of enabling the OC capability of SiC MOSFETs by modifying the gate-source voltage. Since the on-state resistance ( R D S (o n) ) of SiC MOSFETs decreases with an increase in the gate voltage ( V G S ), the conduction losses can be decreased by increasing the V G S . Experiments and simulations have been performed to predict the R D S (o n) with the increase in V G S . It is found that the simulation models provided by manufacturers can be used to predict R D S (o n) accurately even outside the specifications, hence facilitating the precise estimation of conduction losses. It is also concluded that V G S can be increased during OCs in order to keep the conduction losses within the safety limits. A simple concept for implementing this function on a gate driver is also proposed with the additional functionality of increasing the V G S during OC by measuring the on-state voltage of the MOSFET. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 19961073
- Volume :
- 17
- Issue :
- 17
- Database :
- Academic Search Index
- Journal :
- Energies (19961073)
- Publication Type :
- Academic Journal
- Accession number :
- 179645036
- Full Text :
- https://doi.org/10.3390/en17174319