A 0.75V 10nm FinField-Effect Transistor Based Hybrid Self Controlled PreCharge Free Content Addressable Memory for Low Standby Power Applications.

MLA

Shanmugam, Arulpriya, and Kumar Ponnusamy. “A 0.75V 10nm FinField-Effect Transistor Based Hybrid Self Controlled PreCharge Free Content Addressable Memory for Low Standby Power Applications.” International Journal of Electronics, vol. 111, no. 10, Oct. 2024, pp. 1679–99. EBSCOhost, https://doi.org/10.1080/00207217.2024.2312558.

APA

Shanmugam, A., & Ponnusamy, K. (2024). A 0.75V 10nm FinField-Effect Transistor Based Hybrid Self Controlled PreCharge Free Content Addressable Memory for Low Standby Power Applications. International Journal of Electronics, 111(10), 1679–1699. https://doi.org/10.1080/00207217.2024.2312558

Chicago

Shanmugam, Arulpriya, and Kumar Ponnusamy. 2024. “A 0.75V 10nm FinField-Effect Transistor Based Hybrid Self Controlled PreCharge Free Content Addressable Memory for Low Standby Power Applications.” International Journal of Electronics 111 (10): 1679–99. doi:10.1080/00207217.2024.2312558.