Identification of shallow trap centers in InSe single crystals and investigation of their distribution: A thermally stimulated current spectroscopy.

Identification of trap centers in semiconductors takes great importance for improving the performance of electronic and optoelectronic devices. In the present study, we employed the thermally stimulated current (TSC) method within a temperature range of 10–280 K to explore trap centers in InSe crystal—a material with promising applications in next-generation devices. Our findings revealed the existence of two distinct hole trap centers within the InSe crystal lattice located at 0.06 and 0.14 eV. Through the leveraging the T stop method, we offered trap distribution parameters of revealed centers. The results obtained from the experimental methodology employed to investigate the distribution of trap centers indicated that one of the peaks extended between 0.06 and 0.13 eV, while the other spanned from 0.14 to 0.31 eV. Notably, our research uncovers a remarkable variation in trap density, spanning one order of magnitude, for every 10 and 88 meV of energy variation. The results of our research present the characteristics of shallow trap centers in InSe, providing important information for the design and optimization of InSe-based optoelectronic devices. • TSC measurements were performed on InSe crystal in the below room temperature. • The presence of two hole traps at 0.06 and 0.14 eV was revealed. • The distribution of trap centers was investigated by applying T stop - T m method. • The results provide important information for design of InSe-based optoelectronic devices. [ABSTRACT FROM AUTHOR]