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Impedance dynamics in tandem solar cells based on c-Si with upper layers of CsPbBr3 (CsPbI3) perovskite nanocrystals.
- Source :
-
Optical Materials . Oct2024, Vol. 156, pN.PAG-N.PAG. 1p. - Publication Year :
- 2024
-
Abstract
- The application of an additional nanoparticle layer is a common practice for enhancing the optical and electrical properties of third-generation solar cells. In this study, we present the results of impedance spectroscopy (IS) for modified solar cells using Nyquist and Bode diagrams. The structure investigated consists of a conventional double junction based on crystalline silicon (c-Si) coated with thin films of inorganic perovskite nanocrystals (NC) of lead halides CsPbI 3 and CsPbBr 3. The latter are characterized by a significant phonon disorder, which leads to unique electron-phonon interactions and dielectric responses. The IS results indicate that, under the same conditions, the measured Nyquist plots align well with the simulated ones. An equivalent circuit model is proposed, featuring ohmic resistance, recombination resistance, and geometric capacitance. These elements arise due to charge accumulation, charge transfer resistance, and/or additional interfacial electronic states. The study finds that the introduction of a CsPbI 3 layer enhances the photoresponse under bias conditions, but this photoresponse leads to a decrease in DC conductivity. In contrast, the addition of a CsPbBr 3 layer obstructs the photoresponse under bias while slightly improving the photoresponse in the absence of an applied voltage. The results obtained contribute to the improvement of tandem solar cell characteristics featuring top layers of perovskite nanocrystals. • Impedance spectroscopy of films of CsPbI 3 and CsPbBr 3 on c -Si solar cells presented. • Adding of the CsPbI 3 layer enhances the photo response under bias. • Adding of the CsPbBr 3 blocks the photo response under bias but improves it at zero bias. • Nyquist plots for both structures are in agreement with the equivalent circuit model. • The obtained results provide the way to improve the performance of c -Si solar cells. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 09253467
- Volume :
- 156
- Database :
- Academic Search Index
- Journal :
- Optical Materials
- Publication Type :
- Academic Journal
- Accession number :
- 179499712
- Full Text :
- https://doi.org/10.1016/j.optmat.2024.115925