Synthesis of nano-silicon carbide by SiO–C reaction.

Carbon black has been successfully converted into silicon carbide by reacting it with SiO vapor at 1500 °C under Ar gas environment. The influence of reaction temperature, duration and Ar gas flow rate on the final product was examined. The structural and microstructural property of synthesized SiC was characterized using X-ray diffraction (XRD), Raman spectroscopy and scanning electron microscopy (SEM). Micrographs of synthesized SiC showed that the final product was an agglomeration of SiC nano-powder of 50–500 nm size and nano-whiskers/fibres having a diameter of 50–500 nm and lengths in 0.1–10 μm depending on Ar gas flow rate. The higher conversion of C into SiC was observed at 1500 °C with Ar gas flow rate ∼250 ml/min. [ABSTRACT FROM AUTHOR]