Sputter deposited silver niobate thin films: Pathway towards phase purity.

• AgNbO 3 films grown by reactive d.c. magnetron co-sputtering from metal targets. • Effect of oxygen partial pressure and bias potential on phase formation studied. • Films deposited at floating potential form various crystalline and amorphous phases. • More energetic growth conditions lead to the formation of homogeneous AgNbO 3 films. • Significance of precise process control to counteract formation of secondary phases. The quest for environmentally sustainable alternatives to lead-based dielectric materials in dielectric capacitors has led research to the exploration of options such as silver niobate (AgNbO 3), which has been found to display excellent energy storage properties. Homogeneity and phase-purity of the used thin films are vital for optimal performance of these devices. In this study, a systematic variation of oxygen partial pressure and bias voltage during reactive d.c. magnetron co-sputtering from metallic targets is employed to synthesise AgNbO 3 thin films. Structural and chemical composition of the films are investigated using X-ray diffraction, Raman spectroscopy, X-ray photoelectron spectroscopy, energy dispersive X-ray spectroscopy, elastic recoil detection analysis, and Rutherford backscattering spectrometry. The findings emphasise the necessity of precise parameter control during deposition to avoid the presence of undesirable secondary phases like Ag and Ag 2 Nb 4 O 11 and to ensure the formation of homogeneous and phase-pure AgNbO 3 thin films. The gained insights demonstrate the potential of reactive d.c. magnetron sputtering for the deposition of lead-free AgNbO 3 thin films, offering pathways for enhanced environmental compatibility of future dielectric capacitors. [ABSTRACT FROM AUTHOR]