Proton single event effects on 8T global exposure CMOS image sensors.

CMOS image sensors in optical payloads are susceptible to single-event effects when irradiated by high-energy protons from the spatial radiation environment. Single-event transients in images primarily manifest as bright spots, and the characteristics of transient bright spots generated under different incident conditions exhibit some differences. In this study, we conducted proton irradiation experiments on CMOS image sensors at different energy levels and incident angles. The characteristics of single-event transient bright spots generated under various incident conditions were extracted and analysed in detail. Furthermore, the abnormal phenomena of different functional modules of CMOS image sensors observed during proton irradiation experiments were investigated. The results of this study establish the foundation for classifying the detected targets and transient bright spots, indicating that the validation of CMOS image sensor radiation reliability should account for functional abnormalities resulting from high-energy proton irradiation. [ABSTRACT FROM AUTHOR]