FP-LMTO simulation of the physical properties of arsenic-based binary XAs(X = Sc, and Al) compounds.

This paper presents a simulation of the structural and optoelectronic properties of Scandium Arsenide (ScAs) and Aluminum Arsenide (AlAs) compounds. Theoretical modeling was performed using <italic>ab initio</italic> first-principles calculations, specifically the density functional theory (DFT), and the Mindlab numerical software. The software used two methods: the full-potential muffin-tin orbital method (FP-LMTO) and the full-potential plane-wave method (FP-LAPW). These two methods are employed to solve the Schrödinger equation. The exchange correlation effects have been computed using two different approximations: the generalized gradient approximation (GGA) and the local density approximation (LDA). Our findings indicate that the zinc blende structure (B3) is the stable phase, while the Wurtzite phase (B4) is metastable for the AlAs compound. On the other hand, the ScAs compound crystallizes in the NaCl phase (B1). The AlAs compounds undergo three phase transitions: B3→B4, B3→B2 and B3→B1. In contrast, ScAs does not undergo any transition. The obtained results for equilibrium energies, lattice parameters and gap energies are in closer agreement with the experimental and theoretical data. The AlAs compound exhibits a semiconducting character, while ScAs exhibits a semi-metallic character. Additionally, the refractive index of these two compounds is similar to that of silicon, which is crucial for their application in photovoltaic cells. [ABSTRACT FROM AUTHOR]