Cite
High polarization sensitivity passive spin Photogalvanic devices based on 2D perovskite CsMnBr4/CsSbCl3Br/CsMnBr4 heterojunction.
MLA
Qu, Junyang, et al. “High Polarization Sensitivity Passive Spin Photogalvanic Devices Based on 2D Perovskite CsMnBr4/CsSbCl3Br/CsMnBr4 Heterojunction.” Computational Materials Science, vol. 244, Sept. 2024, p. N.PAG. EBSCOhost, https://doi.org/10.1016/j.commatsci.2024.113214.
APA
Qu, J., Li, D., Zhu, Y., Yan, Y., Pang, Y., & Liang, C. (2024). High polarization sensitivity passive spin Photogalvanic devices based on 2D perovskite CsMnBr4/CsSbCl3Br/CsMnBr4 heterojunction. Computational Materials Science, 244, N.PAG. https://doi.org/10.1016/j.commatsci.2024.113214
Chicago
Qu, Junyang, Dan Li, Yudong Zhu, Yue Yan, Yanlan Pang, and Chunjun Liang. 2024. “High Polarization Sensitivity Passive Spin Photogalvanic Devices Based on 2D Perovskite CsMnBr4/CsSbCl3Br/CsMnBr4 Heterojunction.” Computational Materials Science 244 (September): N.PAG. doi:10.1016/j.commatsci.2024.113214.