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Comparative Analysis of Single Event Transients in InGaAs-OI/Bulk/BOI FinFETs for SET-Tolerant InGaAs/Ge-OI Complementary FinFET Circuits.
- Source :
-
IETE Journal of Research . Apr2024, Vol. 70 Issue 4, p4048-4056. 9p. - Publication Year :
- 2024
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Abstract
- The III-V/Ge complementary-FinFET (C-FinFET) based integrated circuits are more susceptible to radiation-induced single event transients (SET) than silicon counterparts. In this paper, the single event transients in n-channel InGaAs structures such as stacked 5-fin InGaAs-Bulk, InGaAs-Body on Insulator (InGaAs-BOI) and InGaAs-on-Insulator (InGaAs-OI) FinFETs are analyzed and optimized for SET-tolerant InGaAs/Ge-OI C-FinFET circuits. The SET analysis is done for these structures for different Linear Energy Transfer (LET), vertical strike positions, normal/angular strike incidences, gate underlap/overlap and oxide materials. The SET pulse widths for InGaAs/Ge-OI C-FinFETs are determined for different load capacitances, LETs, supply voltages and PMOS ON current. It is observed that the SET pulsewidth is lesser for InGaAs-OI/Ge-OI C-FinFETs compared to other two chosen structures. However, having the advantages of both InGaAs-Bulk and InGaAs-OI structures, the InGaAs-BOI FinFET with lesser pulsewidth than InGaAs-Bulk FinFET is a better candidate to use in radiation-prone environment. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 03772063
- Volume :
- 70
- Issue :
- 4
- Database :
- Academic Search Index
- Journal :
- IETE Journal of Research
- Publication Type :
- Academic Journal
- Accession number :
- 179220736
- Full Text :
- https://doi.org/10.1080/03772063.2023.2204836