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Comparative Analysis of Single Event Transients in InGaAs-OI/Bulk/BOI FinFETs for SET-Tolerant InGaAs/Ge-OI Complementary FinFET Circuits.

Authors :
Aneesh, Y. M.
Bindu, B.
Source :
IETE Journal of Research. Apr2024, Vol. 70 Issue 4, p4048-4056. 9p.
Publication Year :
2024

Abstract

The III-V/Ge complementary-FinFET (C-FinFET) based integrated circuits are more susceptible to radiation-induced single event transients (SET) than silicon counterparts. In this paper, the single event transients in n-channel InGaAs structures such as stacked 5-fin InGaAs-Bulk, InGaAs-Body on Insulator (InGaAs-BOI) and InGaAs-on-Insulator (InGaAs-OI) FinFETs are analyzed and optimized for SET-tolerant InGaAs/Ge-OI C-FinFET circuits. The SET analysis is done for these structures for different Linear Energy Transfer (LET), vertical strike positions, normal/angular strike incidences, gate underlap/overlap and oxide materials. The SET pulse widths for InGaAs/Ge-OI C-FinFETs are determined for different load capacitances, LETs, supply voltages and PMOS ON current. It is observed that the SET pulsewidth is lesser for InGaAs-OI/Ge-OI C-FinFETs compared to other two chosen structures. However, having the advantages of both InGaAs-Bulk and InGaAs-OI structures, the InGaAs-BOI FinFET with lesser pulsewidth than InGaAs-Bulk FinFET is a better candidate to use in radiation-prone environment. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
03772063
Volume :
70
Issue :
4
Database :
Academic Search Index
Journal :
IETE Journal of Research
Publication Type :
Academic Journal
Accession number :
179220736
Full Text :
https://doi.org/10.1080/03772063.2023.2204836