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Symmetry change in LaNiO3 films caused by epitaxial strain from LaAlO3, SrTiO3, and DyScO3 pseudocubic (001) surfaces.

Authors :
Izumisawa, Fumiya
Ishii, Yuta
Kimura, Masatoshi
Katase, Takayoshi
Kamiya, Toshio
Yamaura, Jun-ichi
Wakabayashi, Yusuke
Source :
Journal of Applied Physics. 8/21/2024, Vol. 136 Issue 7, p1-11. 11p.
Publication Year :
2024

Abstract

To elucidate the epitaxial strain effect over a wide range of lattice mismatch, we investigated the structures of ∼ 25 nm thick LaNiO 3 films grown on the pseudocubic (001) surfaces of three different substrates, namely, LaAlO 3 (LAO), SrTiO 3 (STO), and DyScO 3 (DSO). Such structural information had been inferred from the intensities of a small number of Bragg reflections that relate to the NiO 6 octahedral tilting in previous studies. Here, we measured more than 100 reciprocal lattice points to derive reliable structural information. The procedure of ordinary crystal structure analysis is hampered by the multidomain structure and limited volume of measurable reciprocal space, both caused by a huge, highly symmetric substrate. To overcome this difficulty, we employed the Bayesian inference to obtain the detailed atomic positions in film samples. Octahedral tilting about the c axis was dominant for the compressively strained film grown on LAO, whereas tilting about the a and b axes was dominant for the tensile strained films grown on STO and DSO. The film lattice parameters of the samples grown on STO and DSO were nearly identical, whereas additional twofold lattice modulation, including cation displacement, was only observed in the latter. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00218979
Volume :
136
Issue :
7
Database :
Academic Search Index
Journal :
Journal of Applied Physics
Publication Type :
Academic Journal
Accession number :
179145351
Full Text :
https://doi.org/10.1063/5.0221417