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Thermal transport in graphene under large mechanical strains.

Authors :
Wang, Yingtao
Zhang, Xian
Source :
Journal of Applied Physics. 8/21/2024, Vol. 136 Issue 7, p1-9. 9p.
Publication Year :
2024

Abstract

Flexible electronic devices with skin-like properties are hailed as revolutionary for the development of next-generation electronic devices, such as electric-skin and humanoid robotics. Graphene is intrinsically flexible due to its structural thinness in nature and are considered next-generation materials for wearable electronics. These devices usually experience a large mechanical deformation in use so as to achieve intimate conformal contact with human skin and to coordinate complex human motions, while heat dissipation has been a major limitation when the device is under a large mechanical strain. Unlike the small deformation (<1%) induced by intrinsic material factors such as lattice mismatch between material components in devices, a large mechanical deformation (>1%) by an external loading condition could lead to apparent changes to global geometric shapes and significantly impact thermal transport. In this study, we investigated the thermal conductivities of graphene under several large mechanical strains: 2.9%, 4.3%, and 6.1%. We used a refined opto-thermal Raman technique to characterize the thermal transport properties and discovered the thermal conductivities to be 2092 ± 502, 972 ± 87, 348 ± 52, and 97 ± 13 W/(m K) for the relaxed state, 2.9%, 4.3%, and 6.1% tensile strain, respectively. Our results showed a significant decreasing trend in thermal conductivities with an increasing mechanical strain. The findings in this study reveal new thermal transport mechanisms in 2D materials and shed light on building novel flexible nanoelectronic devices with enhanced thermal management. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00218979
Volume :
136
Issue :
7
Database :
Academic Search Index
Journal :
Journal of Applied Physics
Publication Type :
Academic Journal
Accession number :
179145339
Full Text :
https://doi.org/10.1063/5.0223188