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Dual-phase competitive behavior in N-type Sn–Bi–Te thermoelectric films achieving high thermoelectric performance.
- Source :
-
Progress in Natural Science . Aug2024, Vol. 34 Issue 4, p795-802. 8p. - Publication Year :
- 2024
-
Abstract
- The dual-phase competitive behavior is introduced as an effective strategy to optimize the physical and chemical properties of N-type Bi 2 Te 3 thermoelectric (TE) materials. Controllable SnTe-embedded Bi 2 Te 3 nanocomposites can be synthesized with the addition of excessive Sn into Bi 2 Te 3 by tuning the crystallization behavior under proper thermal heating temperature. Notably, the precipitation temperature of Bi 2 Te 3 increases from 473 K for Sn 20.9 (Bi 2 Te 3) 79.1 to 573 K for Sn 34.4 (Bi 2 Te 3) 65.6 , expanding the controllable temperature span for the presence of SnTe phase. The second-phase nanoprecipitate SnTe can improve electrical conductivity by competing with the Bi 2 Te 3 phase, achieving an increase of four orders of magnitude at the critical temperature of ∼500 K. Simultaneously, it increases the interfacial energy filtration effect between nanocrystalline grains, decoupling electrical parameters between conductivity and Seebeck coefficient. Consequently, the high power factor of ∼147 μW/mK2 at 650 K for optimized Sn 26.6 (Bi 2 Te 3) 73.4 films can be obtained, which is more than twice that of the pure Bi 2 Te 3 material. Our work demonstrates a new physical mechanism to unravel the complicated structure-property relationship by dual-phase competitive behavior during phase transition. This study fills the gap in knowledge on the effects of the SnTe phase regarding the Bi 2 Te 3 system and provides guidance for the innovative design of high-performing inorganic thermoelectrics. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 10020071
- Volume :
- 34
- Issue :
- 4
- Database :
- Academic Search Index
- Journal :
- Progress in Natural Science
- Publication Type :
- Academic Journal
- Accession number :
- 179139801
- Full Text :
- https://doi.org/10.1016/j.pnsc.2024.07.008