Luminescence efficiency and carrier dynamics for InGaAs/GaAs surface quantum dots in coupled heterostructures.

InGaAs/GaAs surface quantum dot (SQD) heterostructures have long been viewed as having great potential for realizing environmental gas detection devices. The research has recently been steered into discovering ways to inject carriers into the available SQD energy states to facilitate readable devices. In the present research, carrier injection from buried QDs (BQDs) to SQDs was controlled by changing the interlayer coupling. Photoluminescence (PL) measurements show that, by increasing the stacking period of BQDs, the carrier collection efficiency and subsequently the luminescence intensity for SQDs can be effectively improved. A rate equation simulation of the carrier recombination process is used to quantitatively describe the luminescent quantum efficiency (I QE) for the SQDs, indicating an increase with additional BQD layers due to an increase in carrier injection. The PL spectra along with the rate equation simulations further indicated that for these SQD hybrid structures nonradiative recombination dominates, with Auger recombination becoming significant at high excitation intensities. These results may help to understand the carrier dynamics in coupled SQDs hybrid structures. In addition, they provide a path to manipulating the properties of InGaAs SQDs for the development of gas sensors. • Architecture carrier injection heterostructures for InGaAs surface quantum dots (SQDs). • Modified rate equation model is used to quantitatively describe carrier recombination of SQDs. • Nonradiative recombination dominates for these SQD hybrid structures, with Auger recombination becoming significant at high excitation intensities. • The PL measurement provides an in-depth assessment of the InGaAs SQDs heterostructures. [ABSTRACT FROM AUTHOR]