Origin of exponentially large increase in the leakage current in alumina films depending on the ALD synthesis temperature.

Amorphous aluminum oxide a-Al2O3 deposited by atomic layer deposition (ALD) is widely used in nonvolatile memory devices. In this paper, the leakage current dependence on the ALD synthesis temperature is investigated by six charge transport models: Schottky effect, thermally assisted tunneling at a contact, Frenkel effect, Hill-Adachi model of overlapping Coulomb potentials, Makram-Ebeid and Lannoo multiphonon isolated trap ionization model, and Nasyrov–Gritsenko model of phonon-assisted tunneling between neighboring traps. It is shown that the leakage current exponentially increases with the ALD synthesis temperature, which is related to the increase in trap concentration. [ABSTRACT FROM AUTHOR]