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Improving crystal quality of Er-doped Gd2O3 grown on a Si(111) substrate by inserting a bifunctional GdOx layer.
- Source :
-
CrystEngComm . 8/21/2024, Vol. 26 Issue 31, p4190-4194. 5p. - Publication Year :
- 2024
-
Abstract
- We developed a growth technique that improves the crystallinity and optical properties (photoluminescence intensity and lifetime) of Er-doped Gd2O3 (Er:Gd2O3) on a Si(111) substrate. Deposition of thin (7.5 Å thick) Gd metal on the SiOx-covered surface of the Si(111) substrate prior to the growth of Er:Gd2O3, and the successive, thermally-induced redox reaction gives rise to the solid-phase epitaxy of GdOx on Si, which protects Si from unintentional oxidation and fosters the epitaxial growth of Er:Gd2O3 on it; i.e., GdOx serves as a protection and seed (bifunctional) layer. This technique is promising for developing high-performance optical devices using high-quality rare-earth oxide films grown on Si substrates. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 14668033
- Volume :
- 26
- Issue :
- 31
- Database :
- Academic Search Index
- Journal :
- CrystEngComm
- Publication Type :
- Academic Journal
- Accession number :
- 178815973
- Full Text :
- https://doi.org/10.1039/d4ce00226a