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Physical mechanism of oxide interfacial traps, carrier mobility degradation and series resistance on contrast reversal in scanning-capacitance-microscopy dopant concentration extraction.
- Source :
-
Applied Physics Letters . 8/1/2005, Vol. 87 Issue 5, p053504. 3p. 1 Diagram, 2 Graphs. - Publication Year :
- 2005
-
Abstract
- In this letter, the contrast reversal effect in scanning-capacitance-microscopy (SCM) dopant concentration extraction is investigated both theoretically and experimentally. The shift of the turning point in the nonmonotonic response of peak dC/dV signal versus dopant concentration to higher dopant concentrations is explained by the difference of the capture/emission time constant of the interface states and the series resistance of the semiconductor sample. This is verified by comparing the experimental SCM measurements with the simulated peak dC/dV profile on a p-type multiple dopant step sample. The contrast reversal effect, which affects the accuracy of dopant concentration extraction using the SCM peak dC/dV signal, can be minimized by using an overlying oxide with good interfacial quality and a semiconductor sample of low series resistance. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 87
- Issue :
- 5
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 17868661
- Full Text :
- https://doi.org/10.1063/1.2006979