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The rise of borophene.

Authors :
Kumar, Prashant
Singh, Gurwinder
Bahadur, Rohan
Li, Zhixuan
Zhang, Xiangwei
Sathish, C.I.
Benzigar, Mercy R.
Kim Anh Tran, Thi
Padmanabhan, Nisha T.
Radhakrishnan, Sithara
Janardhanan, Jith C
Ann Biji, Christy
Jini Mathews, Ann
John, Honey
Tavakkoli, Ehsan
Murugavel, Ramaswamy
Roy, Soumyabrata
Ajayan, Pulickel M.
Vinu, Ajayan
Source :
Progress in Materials Science. Dec2024, Vol. 146, pN.PAG-N.PAG. 1p.
Publication Year :
2024

Abstract

Borophene stands out uniquely among Xenes with its metallic character, Dirac nature, exceptional electron mobility, thermal conductivity, and Young's moduli—surpassing graphene. Invented in 2015, various methods, including atomic layer deposition, molecular beam epitaxy, and chemical vapor deposition, have successfully been demonstrated to realize substrate-supported crystal growth. Top-down approaches like micromechanical, sonochemical, solvothermal and modified hummer's techniques have also been employed. Thanks to its high electronic mobility, borophene serves as an active material for ultrafast sensing of light, gases, molecules, and strain. Its metallic behaviour, electrochemical activity, and anti-corrosive nature make it ideal for applications in energy storage and catalysis. It has been proven effective as an electrocatalyst for HER, OER, water splitting, CO 2 reduction, and NH 3 reduction reactions. Beyond this, borophene has found utility in bioimaging, biosensing, and various biomedical applications. A special emphasis will be given on the borophene nanoarchitectonics i.e. doped borophene and borophene-based hybrids with other 2D materials and nanoparticles and the theoretical understanding of these emerging materials systems to gain more insights on their electronic structure and properties, aiming to manipulate borophene for tailored applications. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00796425
Volume :
146
Database :
Academic Search Index
Journal :
Progress in Materials Science
Publication Type :
Academic Journal
Accession number :
178682573
Full Text :
https://doi.org/10.1016/j.pmatsci.2024.101331