Cite
Influence of excess silicon on polytype selection during metal-mediated epitaxy of GaN nanowires.
MLA
Liu, A., et al. “Influence of Excess Silicon on Polytype Selection during Metal-Mediated Epitaxy of GaN Nanowires.” Applied Physics Letters, vol. 125, no. 4, July 2024, pp. 1–6. EBSCOhost, https://doi.org/10.1063/5.0210669.
APA
Liu, A., Xi, Z., Li, M., Yang, J. C., Qi, L., & Goldman, R. S. (2024). Influence of excess silicon on polytype selection during metal-mediated epitaxy of GaN nanowires. Applied Physics Letters, 125(4), 1–6. https://doi.org/10.1063/5.0210669
Chicago
Liu, A., Z. Xi, M. Li, J. C. Yang, L. Qi, and R. S. Goldman. 2024. “Influence of Excess Silicon on Polytype Selection during Metal-Mediated Epitaxy of GaN Nanowires.” Applied Physics Letters 125 (4): 1–6. doi:10.1063/5.0210669.