Light‐Induced Ferroelectric Modulation of p‐n Homojunctions in Monolayer MoS2.

The association of 2D materials and ferroelectrics offers a promising approach to tune the optoelectronic properties of atomically thin Transition Metal Dichalcogenides (TMDs). In this work, the combined effect of ferroelectricity and light on the optoelectronic properties of monolayer (1L)‐MoS2 deposited on periodically poled lithium niobate crystals is explored. Using scanning micro‐photoluminescence, the effect of excitation intensity, scanning direction, and domain walls on the 1L‐MoS2 photoluminescence properties is analyzed, offering insights into charge modulation of MoS2. The findings unveil a photoinduced charging process dependent on the ferroelectric domain orientation, in which light induces charge generation and transfer at the monolayer‐substrate interface. This highlights the substantial role of light excitation in ferroelectrically‐driven electrostatic doping in MoS2. Additionally, the work provides insights into the effect of the strong, nanometrically confined electric fields on LiNbO3 domain wall surfaces, demonstrating precise control over charge carriers in MoS2, and enabling the creation of deterministic p‐n homojunctions with exceptional precision. The results suggest prospects for novel optoelectronic and photonic application involving monolayer TMDs by combining light‐matter interaction processes and the surface selectivity provided by ferroelectric domain structures. [ABSTRACT FROM AUTHOR]