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Magnetic phase diagram of the mixed-valence semiconductor TmSe under multi-extreme () conditions

Authors :
Mignot, Jean-Michel
Goncharenko, Igor N.
Matsumura, Takeshi
Suzuki, Takashi
Source :
Physica B. Apr2005, Vol. 359-361, p105-107. 3p.
Publication Year :
2005

Abstract

Abstract: The high-pressure (type-II) antiferromagnetic phase of the mixed-valence semiconductor TmSe has been studied by neutron diffraction at in high magnetic fields. Surprisingly, the phase diagram reveals the existence, above 1.6T, of an AF I phase reminiscent of the ambient-pressure, zero-field structure. This result provides a new opportunity to investigate the relationship between magnetic and electronic structures in Tm monochalcogenides. [Copyright &y& Elsevier]

Details

Language :
English
ISSN :
09214526
Volume :
359-361
Database :
Academic Search Index
Journal :
Physica B
Publication Type :
Academic Journal
Accession number :
17864681
Full Text :
https://doi.org/10.1016/j.physb.2005.01.004