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Dynamic frequency switching of a bandstop reconfigurable frequency selective surface with PIN diodes for C/X and Ku-band shielding applications.

Authors :
Güler, Cem
Esen Bayer Keskin, Sena
Türker Tokan, Nurhan
Source :
AEU: International Journal of Electronics & Communications. Aug2024, Vol. 183, pN.PAG-N.PAG. 1p.
Publication Year :
2024

Abstract

This paper presents a reconfigurable bandstop frequency selective surface (R-FSS) design capable of switching across C, X and Ku-bands. The electronic switching mechanism is achieved in real-time through PIN diodes. The combination of rectangular loops is selected as unit-cell and PIN diodes are strategically placed to dynamically adjust the bandstop region. The device operates in three distinct modes corresponding to the activation status of the PIN-diodes. For TE polarization, Mode 1 encompasses the Ku-bandstop (12.64–14.75 GHz), Mode 2 corresponds to the C/X-bandstop (6.62–11.28 GHz), and Mode 3 involves the X-bandstop (9.82–11.63 GHz), whereas X-bandstop characteristic is observed for TM polarization (9.054–––11.29 GHz). In TE polarization, each configuration is defined by specific equivalent circuit models, featuring an inductance in parallel with series L-C resonant circuit, an L-C resonant circuit in parallel with the inductance, and two L-C resonant circuits in parallel, respectively. Additionally, for TM polarization, the configuration incorporates two parallel L-C resonant circuits. A prototype of the proposed R-FSS is fabricated and measured. The results demonstrated effective switching operation across the C, X and Ku-band stopbands, depending on the biasing of the PIN diodes. The experimental outcomes are consistent with the simulation results, affirming the compatibility and functionality of the proposed R-FSS design. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
14348411
Volume :
183
Database :
Academic Search Index
Journal :
AEU: International Journal of Electronics & Communications
Publication Type :
Academic Journal
Accession number :
178537816
Full Text :
https://doi.org/10.1016/j.aeue.2024.155402