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Comparisons between the high-pressure SPS and routine SPS of dense YH2-x.

Authors :
He, Hui
Wang, Zhiyi
Li, Bingqing
Chen, Jun
Luo, Wenhua
Yang, Zhenliang
Gao, Rui
Chu, Mingfu
Kou, Huaqin
Li, Yingqiu
Xiong, Penghui
Wu, Haoxi
Xu, Jingkun
Chang, Dingyue
Source :
Journal of Alloys & Compounds. Oct2024, Vol. 1002, pN.PAG-N.PAG. 1p.
Publication Year :
2024

Abstract

Spark plasma sintering (SPS) shows great potential in the fabrication of bulk YH 2- x. For the first time, the high-pressure SPS (HPSPS) of YH 2- x is explored and compared with the routine SPS. It is found that HPSPS remarkably reduces the densification temperature, and thus the thermal dehydrogenation phase transition (δ-YH 2- x → α-Y) and the hydrogen loss of YH 2- x can be avoided. Nearly fully dense δ-YH 1.80 monolith is successfully prepared by HPSPS under 500 MPa at a relatively low temperature of 800 °C. HPSPS is effective in overcoming the thermal dehydrogenation problem during the sintering of YH 2- x. Compared with significant grain growth in the routine SPS, the grain growth in the HPSPS is very limited. In terms of thermal properties, the thermal conductivity of HPSPS prepared YH 2- x is relatively low below 600 °C, then tends to be closed above 600 °C, compared with routine SPS prepared and directly hydrided YH 2- x. The thermal expansion of HPSPS prepared dense YH 2- x is basically consistent with that of directly hydrided bulk. This study provides a valuable reference for the sintering of high-quality δ-YH 2- x and other metal hydrides monoliths. • High-pressure SPS (HPSPS) is used to fabricate dense δ-YH 2- x for the first time. • The differences between routine SPS and HPSPS of dense YH 2- x are clarified. • HPSPS provides a "low-temperature sintering" and very limited grain growth. • The thermal dehydrogenation problem in the sintering of YH 2- x is overcome by HPSPS. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
09258388
Volume :
1002
Database :
Academic Search Index
Journal :
Journal of Alloys & Compounds
Publication Type :
Academic Journal
Accession number :
178536868
Full Text :
https://doi.org/10.1016/j.jallcom.2024.175416