Variable range hopping-assisted parasitic channel leakage in AlN/GaN/AlGaN HEMTs on Si.

MLA

Liu, Siyu, et al. “Variable Range Hopping-Assisted Parasitic Channel Leakage in AlN/GaN/AlGaN HEMTs on Si.” Applied Physics Letters, vol. 125, no. 2, July 2024, pp. 1–5. EBSCOhost, https://doi.org/10.1063/5.0219359.

APA

Liu, S., Zhuang, Y., Li, H., Xie, Q., Wang, Y., Xie, H., Ranjan, K., & Ng, G. I. (2024). Variable range hopping-assisted parasitic channel leakage in AlN/GaN/AlGaN HEMTs on Si. Applied Physics Letters, 125(2), 1–5. https://doi.org/10.1063/5.0219359

Chicago

Liu, Siyu, Yihao Zhuang, Hanchao Li, Qingyun Xie, Yue Wang, Hanlin Xie, Kumud Ranjan, and Geok Ing Ng. 2024. “Variable Range Hopping-Assisted Parasitic Channel Leakage in AlN/GaN/AlGaN HEMTs on Si.” Applied Physics Letters 125 (2): 1–5. doi:10.1063/5.0219359.