Theoretical study of the magnetoresistance under electric field in III–V diluted magnetic semiconductor

Abstract: In this paper we study the magnetoresistance and the coupling energy in heterostructures formed by two magnetic layers Ga1− x Mn x As separated by a nonmagnetic spacer GaAs under an electric field and develop a mean-field theory of carrier in diluted magnetic semiconductor. Our main result indicates that magnetoresistance can be dramatically suppressed by an external electric field. [Copyright &y& Elsevier]